Electron discharge devices using electron-bombarded semiconductors
    1.
    发明授权
    Electron discharge devices using electron-bombarded semiconductors 失效
    使用电子束式半导体的电子放电器件

    公开(公告)号:US3733510A

    公开(公告)日:1973-05-15

    申请号:US3733510D

    申请日:1971-08-17

    Applicant: US ARMY

    CPC classification number: H01J25/00 H01J23/36

    Abstract: Amplifying and oscillating devices wherein an element beam from an appropriate electron gun is directed through an apertured microwave cavity resonator means and bombards a coaxially mounted semiconductor p-n junction. In the case of an amplifier, an input r-f signal is coupled into the cavity resonator and modulates the electron beam. In the case of an oscillator, a pair of closely coupled microwave cavities is used to achieve the feedback essential to oscillation. In either case, a microwave cavity resonator means can be tuned mechanically or thermally.

    Abstract translation: 放大和振荡装置,其中来自适当电子枪的元件束被引导通过有孔微波谐振器装置并且轰击同轴安装的半导体p-n结。

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