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公开(公告)号:US20160126495A1
公开(公告)日:2016-05-05
申请号:US14896572
申请日:2014-05-21
申请人: ULVAC, INC.
发明人: Tadashi Oka , Yuko Kato , Takahiro Yajima , Yousuke Matsumoto , Shouta Kanai , Yasuaki Murata
CPC分类号: H01L51/5253 , H01L51/004 , H01L51/5246 , H01L51/56 , H01L2251/301
摘要: To provide a device structure that is capable of preventing oxygen, water, and the like from entering the device, and a method of producing the same.A device structure 10 according to an embodiment of the present invention includes a substrate (base) 2, a device layer 3, a first inorganic material layer (convex portion) 41, and a first resin material 51. The substrate 2 has a first surface 2a and a second surface 2c opposite to the first surface 2a. The device layer 3 is arranged on at least the first surface 2a out of the first and second surfaces 2a and 2c. The first inorganic material layer 41 is formed on the first surface 2a. The first resin material 51 is unevenly arranged around the first inorganic material layer 41.
摘要翻译: 提供能够防止氧,水等进入装置的装置结构及其制造方法。 根据本发明实施例的器件结构10包括基底(基底)2,器件层3,第一无机材料层(凸部)41和第一树脂材料51.基底2具有第一表面 2a和与第一表面2a相对的第二表面2c。 装置层3至少布置在第一和第二表面2a和2c之外的第一表面2a上。 第一无机材料层41形成在第一表面2a上。 第一树脂材料51不均匀地设置在第一无机材料层41周围。
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公开(公告)号:US10276827B2
公开(公告)日:2019-04-30
申请号:US14896572
申请日:2014-05-21
申请人: Ulvac, Inc.
发明人: Tadashi Oka , Yuko Kato , Takahiro Yajima , Yousuke Matsumoto , Shouta Kanai , Yasuaki Murata
摘要: To provide a device structure that is capable of preventing oxygen, water, and the like from entering the device, and a method of producing the same.A device structure 10 according to an embodiment of the present invention includes a substrate (base) 2, a device layer 3, a first inorganic material layer (convex portion) 41, and a first resin material 51. The substrate 2 has a first surface 2a and a second surface 2c opposite to the first surface 2a. The device layer 3 is arranged on at least the first surface 2a out of the first and second surfaces 2a and 2c. The first inorganic material layer 41 is formed on the first surface 2a. The first resin material 51 is unevenly arranged around the first inorganic material layer 41.
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