公开(公告)号：US10665546B1

公开(公告)日：2020-05-26

申请号：US16212401

申请日：2018-12-06

Applicant: United Microelectronics Corp.

Inventor： Da-jun Lin ,  Bin-Siang Tsai ,  San-Fu Lin

IPC: H01L21/764 ,  H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L23/528

Abstract: A structure of semiconductor device includes a substrate, having a dielectric layer on top. At least two metal elements are formed in the dielectric layer, wherein an air gap is between adjacent two of the metal elements. A cap layer is disposed over the substrate, wherein a portion of the cap layer above the adjacent two of the metal elements has a hydrophilic surface. An inter-layer dielectric layer is disposed on the cap layer. The inter-layer dielectric layer seals the air gap between the two metal elements. The air gap remains and extends higher than a top surface of the metal elements.