公开(公告)号：US20210119124A1

公开(公告)日：2021-04-22

申请号：US16687297

申请日：2019-11-18

Applicant: United Microelectronics Corp.

Inventor： WEN-JEN WANG ,  Chun-Hung Cheng ,  Chuan-Fu Wang

IPC: H01L45/00

Abstract: A memory device structure includes a substrate, a memory stacked structure, and a spacer. The memory stacked structure is formed on the substrate by stacking a first electrode layer, a memory material layer, and a second electrode layer. The memory material layer has a tilted sidewall, or the memory material layer and the first electrode layer have a tilted sidewall. The tilted sidewall is indented with respect to a sidewall of the second electrode layer. The spacer is disposed on the tilted sidewall.