公开(公告)号：US20240422988A1

公开(公告)日：2024-12-19

申请号：US18352269

申请日：2023-07-14

Applicant: United Microelectronics Corp.

Inventor： Cheng-Tung Huang ,  Yanjou Chen ,  Chien-Yu Ko

IPC: H10B61/00

Abstract: Provided is a semiconductor structure including a circuit layer, an island-shaped conductive layer, a MRAM cell, a bit line and a conductive via. The circuit layer is disposed on a substrate. The island-shaped conductive layer is disposed on the circuit layer. The MRAM cell is disposed between the island-shaped conductive layer and the circuit layer, and is electrically connected to the island-shaped conductive layer and the circuit layer. The bit line is disposed on the island-shaped conductive layer. The conductive via is disposed between the bit line and the island-shaped conductive layer. The island-shaped conductive layer is in contact with a top surface of the MRAM cell.