公开(公告)号：US08716104B1

公开(公告)日：2014-05-06

申请号：US13721021

申请日：2012-12-20

Applicant: United Microelectronics Corporation

Inventor： Jian-Jun Zhang ,  Han-Chuan Fang ,  Xiao-Wei Shu ,  Jian-Dong Zhang ,  Yan-Jun Liu ,  Miao Zhang

IPC: H01L21/76

CPC classification number: H01L21/76224 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02315

Abstract: A method of fabricating an isolation structure of a semiconductor device includes the following steps. Firstly, a substrate including a first surface and a second surface is provided. At least one trench is formed in the first surface of the substrate. The trench has a sidewall and a bottom surface. Then, a first chemical vapor deposition process is performed to form a first isolation layer on the first surface of the substrate and the sidewall and the bottom surface of the trench. Then, an anisotropic surface treatment process is performed, so that a surface of the first isolation layer has differential surface chemical properties. Afterwards, a second chemical vapor deposition process is performed to form a second isolation layer on the first isolation layer with a surface having differential surface chemical properties.

Abstract translation: 制造半导体器件的隔离结构的方法包括以下步骤。 首先，提供包括第一表面和第二表面的基板。 在基板的第一表面中形成至少一个沟槽。 沟槽具有侧壁和底面。 然后，进行第一化学气相沉积工艺以在衬底的第一表面和沟槽的侧壁和底表面上形成第一隔离层。 然后，进行各向异性表面处理工艺，使得第一隔离层的表面具有差的表面化学性质。 之后，进行第二化学气相沉积工艺以在第一隔离层上形成具有不同表面化学性质的表面的第二隔离层。