公开(公告)号：US20240203683A1

公开(公告)日：2024-06-20

申请号：US18504438

申请日：2023-11-08

申请人： VEECO INSTRUMENTS INC.

发明人： Mohammad SAGHAYEZHIAN ,  Binyamin RUBIN ,  Kirill GUTSOL

IPC分类号： H01J37/147

CPC分类号： H01J37/147

摘要： An in situ cleansing of grids of an ion beam system, such as a deposition and/or etching system, that includes applying a negative bias on the downstream-most grid and etching redeposited material from the grid. Any or all of the chamber pressure of the system, the extraction current in the ion beam source, the beam divergence, and perveance can be adjusted with the deceleration grid bias. The methods of this disclosure can be applied to any gridded ion source systems, including those with an assist ion beam.