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公开(公告)号:US20200098930A1
公开(公告)日:2020-03-26
申请号:US16141408
申请日:2018-09-25
申请人: Van H. LE , Tahi GHANI , Jack T. KAVALIEROS , Gilbert DEWEY , Matthew METZ , Miriam RESHOTKO , Benjamin CHU-KUNG , Shriram SHIVARAMAN , Abhishek SHARMA , NAZILA HARATIPOUR
发明人: Van H. LE , Tahi GHANI , Jack T. KAVALIEROS , Gilbert DEWEY , Matthew METZ , Miriam RESHOTKO , Benjamin CHU-KUNG , Shriram SHIVARAMAN , Abhishek SHARMA , NAZILA HARATIPOUR
IPC分类号: H01L29/786 , H01L29/423 , H01L29/45 , H01L29/66 , H01L27/108 , H01L27/24
摘要: Embodiments herein describe techniques for a thin-film transistor (TFT), which may include a substrate oriented in a horizontal direction and a transistor above the substrate. The transistor includes a gate electrode above the substrate, a gate dielectric layer around the gate electrode, and a channel layer around the gate dielectric layer, all oriented in a vertical direction substantially orthogonal to the horizontal direction. Furthermore, a source electrode or a drain electrode is above or below the channel layer, separated from the gate electrode, and in contact with a portion of the channel layer. Other embodiments may be described and/or claimed.