Micro-Resistance Structure with High Bending Strength, Manufacturing Method and Semi-Finished Structure Thereof
    1.
    发明申请
    Micro-Resistance Structure with High Bending Strength, Manufacturing Method and Semi-Finished Structure Thereof 有权
    具有高弯曲强度的微电阻结构,制造方法和半成品结构

    公开(公告)号:US20160064122A1

    公开(公告)日:2016-03-03

    申请号:US14819210

    申请日:2015-08-05

    CPC classification number: H01C1/028 H01C17/02

    Abstract: A micro-resistance structure with high bending strength is disclosed. The micro-resistance structure with high bending strength comprises a multi-layer metallic substrate; a patterned electrode layer disposed on a lower surface of the multi-layer metallic substrate; an encapsulant layer covering a portion of the multi-layer metallic substrate, wherein the encapsulant layer is substantially made of a flexible resin ink; and two external electrodes, which are electrically insulated from each other, covering the exposed portion of the multi-layer metallic substrate. The abovementioned structure is characterized in high bendability and applicable to wearable devices. A manufacturing method and a semi-finished structure of the micro-resistance structure with high bending strength are also disclosed herein.

    Abstract translation: 公开了具有高弯曲强度的微电阻结构。 具有高抗弯强度的微电阻结构包括多层金属基底; 设置在所述多层金属基板的下表面上的图案化电极层; 覆盖所述多层金属基材的一部分的密封剂层,其中所述密封剂层基本上由柔性树脂油墨制成; 和彼此电绝缘的两个外部电极,覆盖多层金属基板的露出部分。 上述结构的特征在于高弯曲性,适用于可穿戴装置。 本文还公开了具有高弯曲强度的微电阻结构的制造方法和半成品结构。

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