专利检索 ap:("Vladimir Mihailovitc Krivtsun" OR "Vadim Yevgenyevich Banine" OR "Arno Jan Bleeker" OR "Vladimir Vitalevitch Ivanov" OR "Konstantin Nikolaevitch Koshelev" OR "Johannes Hubertus Josephina Moors" OR "Sergey Churilov" OR "Denis Glushkov") AND inv:"Sergey Churilov" 第 1 页

1.

发明申请
TARGET MATERIAL, A SOURCE, AN EUV LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD USING THE SAME 审中-公开
标题翻译：目标材料，源，EUV光刻设备及使用其的器件制造方法

公开(公告)号：US20110043777A1

公开(公告)日：2011-02-24

申请号：US12933668

申请日：2009-03-20

申请人： Vladimir Mihailovitc Krivtsun , Vadim Yevgenyevich Banine , Arno Jan Bleeker , Vladimir Vitalevitch Ivanov , Konstantin Nikolaevitch Koshelev , Johannes Hubertus Josephina Moors , Sergey Churilov , Denis Glushkov

发明人： Vladimir Mihailovitc Krivtsun , Vadim Yevgenyevich Banine , Arno Jan Bleeker , Vladimir Vitalevitch Ivanov , Konstantin Nikolaevitch Koshelev , Johannes Hubertus Josephina Moors , Sergey Churilov , Denis Glushkov

IPC分类号： G03B27/54 , G03F7/20 , C22C28/00

CPC分类号： H05G2/003 , H05G2/005 , H05G2/008

摘要： A target material is configured to be used in a source constructed and arranged to generate a radiation beam having a wavelength in an extreme ultraviolet range. The target material includes a Gd-based composition configured to modify a melting temperature of Gd.

摘要翻译： 目标材料被配置为用于构造和布置成产生具有极紫外范围波长的辐射束的源。目标材料包括配置成改变Gd的熔融温度的Gd基组合物。