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公开(公告)号:US11898254B2
公开(公告)日:2024-02-13
申请号:US17965802
申请日:2022-10-14
发明人: Yoonjae Yu , Seungyoung Oh , Eunyoung Choi , Joohee Jang , Soyoung Choi , Sanghyun Cho
摘要: Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may significantly reduce plasma contaminant particles which are generated during formation of a fluoride coating, and a fluorinated component obtained by the method.