公开(公告)号：US20140040535A1

公开(公告)日：2014-02-06

申请号：US13954135

申请日：2013-07-30

申请人： WONSEOK LEE ,  YOUNGKUG MOON ,  TAEK-SUNG KIM

发明人： WONSEOK LEE ,  YOUNGKUG MOON ,  TAEK-SUNG KIM

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G06F2212/7211

摘要： A method is provided for controlling a write operation in a nonvolatile memory device to provide wear leveling, where the nonvolatile memory device includes multiple memory blocks. The method includes reading write indication information with respect to at least a selected memory block of the multiple memory blocks; determining whether a write order of data to be stored in the selected memory block is an ascending order or a descending order, based on the write indication information of the selected memory block; and generating addresses of memory regions in the selected memory block in an ascending order when the write order of the data is determined to be an ascending order, and generating addresses of the memory regions in the selected memory block in a descending order when the write order is determined to be a descending order.

摘要翻译： 提供了一种用于控制非易失性存储器件中的写入操作以提供损耗均衡的方法，其中非易失性存储器件包括多个存储器块。 所述方法包括：读取至少所述多个存储块的所选存储块的写入指示信息; 基于所选择的存储块的写入指示信息，确定要存储在所选存储器块中的数据的写入顺序是升序还是降序; 以及当所述数据的写入顺序被确定为升序时，以升序生成所选择的存储器块中的存储器区域的地址，并且当所述写入顺序为低时产生所选存储器块中的存储器区域的地址 被确定为降序。