METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
    2.
    发明申请
    METHOD FOR PRODUCING POLYCRYSTALLINE SILICON 审中-公开
    生产多晶硅的方法

    公开(公告)号:US20170001868A1

    公开(公告)日:2017-01-05

    申请号:US15113332

    申请日:2015-01-16

    CPC classification number: C01B33/035 C30B15/36

    Abstract: Production of highly pure comminuted polycrystalline silicon from polycrystalline silicon rods produced by the Siemens process is facilitated by removal of graphite residues from the electrode ends of the rods by removing the contaminated end portions by means of mechanical impulses.

    Abstract translation: 通过西门子方法生产的来自多晶硅棒的高纯度粉碎多晶硅的生产通过通过机械冲击去除污染的端部而从棒的电极端部除去石墨残留物而得到促进。

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