公开(公告)号：US5672994A

公开(公告)日：1997-09-30

申请号：US576026

申请日：1995-12-21

申请人： Wai-Ming William Au ,  Edward Joseph Nowak ,  Minh Ho Tong

发明人： Wai-Ming William Au ,  Edward Joseph Nowak ,  Minh Ho Tong

IPC分类号： G11C17/16 ,  H01L23/525 ,  H01H37/76

CPC分类号： G11C17/16 ,  H01L23/5252 ,  H01L2924/0002

摘要： A programmable device is formed from a field-effect transistor. Specifically, the present invention generally related to integrated circuit (IC) structures and more particularly, to an improved antifuse structure for use in programming redundant and customizable IC chips. The anti-fuse is NFET made of MOS material and formed at a face of a semiconductor layer having an n-type doped source, and drain region, and a p-type doped channel region separating the source and drain regions. The device is programmed by applying a high voltage to the NFET drain to form a hot spot located along the channel width of the drain and thereby forming a bridge, which now has less resistance than the surrounding channel material, to the NFET source.

摘要翻译： 可编程器件由场效应晶体管形成。 具体地，本发明一般涉及集成电路（IC）结构，更具体地说，涉及用于编程冗余且可定制的IC芯片的改进的反熔丝结构。 反熔丝是由MOS材料制成的NFET，并且形成在具有n型掺杂源的半导体层的表面和漏极区域以及分离源极和漏极区域的p型掺杂沟道区域。 通过向NFET漏极施加高电压来形成器件，以形成沿着漏极的沟道宽度定位的热点，从而形成现在具有比周围通道材料更小的电阻到NFET源的桥。

公开(公告)号：US5774011A

公开(公告)日：1998-06-30

申请号：US864254

申请日：1997-05-28

申请人： Wai-Ming William Au ,  Edward Joseph Nowak ,  Ming Ho Tong

发明人： Wai-Ming William Au ,  Edward Joseph Nowak ,  Ming Ho Tong

IPC分类号： G11C17/16 ,  H01L23/525 ,  H01H37/76

CPC分类号： G11C17/16 ,  H01L23/5252 ,  H01L2924/0002

摘要： A programmable device is formed from a field-effect transistor. Specifically, the present invention generally related to integrated circuit (IC) structures and more particularly, to an improved antifuse structure for use in programming redundant and customizable IC chips. The anti-fuse is NFET made of MOS material and formed at a face of a semiconductor layer having an n-type doped source, and drain region, and a p-type doped channel region separating the source and drain regions. The device is programmed by applying a high voltage to the NFET drain to form a hot spot located along the channel width of the drain and thereby forming a bridge, which now has less resistance than the surrounding channel material, to the NFET source.

摘要翻译： 可编程器件由场效应晶体管形成。 具体地，本发明一般涉及集成电路（IC）结构，更具体地说，涉及用于编程冗余且可定制的IC芯片的改进的反熔丝结构。 反熔丝是由MOS材料制成的NFET，并且形成在具有n型掺杂源的半导体层的表面和漏极区域以及分离源极和漏极区域的p型掺杂沟道区域。 通过向NFET漏极施加高电压来形成器件，以形成沿着漏极的沟道宽度定位的热点，从而形成现在具有比周围通道材料更小的电阻到NFET源的桥。