公开(公告)号：US06713338B2

公开(公告)日：2004-03-30

申请号：US10315992

申请日：2002-12-11

申请人： Wen-Tsung Wang ,  Yi-Tsung Jan ,  Sung-Min Wei ,  Chih-Cherng Liao ,  Zhe-Xiong Wu ,  Mao-Tsung Chen ,  Yuan-Heng Li

发明人： Wen-Tsung Wang ,  Yi-Tsung Jan ,  Sung-Min Wei ,  Chih-Cherng Liao ,  Zhe-Xiong Wu ,  Mao-Tsung Chen ,  Yuan-Heng Li

IPC分类号： H01L218238

CPC分类号： H01L29/66659 ,  H01L29/7835

摘要： A method for fabricating source/drain devices. A semiconductor substrate is provided with a gate formed thereon, a first doped area is formed on a first side of the gate on the semiconductor substrate, and a second doped area is formed on a second side of the gate on the semiconductor substrate in a manner such that the second doped area is separated from the gate by a predetermined distance. A patterned photo resist layer is formed on the semiconductor substrate having an opening on the second side, the exposed gate less than half the width of the gate. The semiconductor substrate is implanted and annealed to form a dual diffusion area on the second side of the gate using the patterned photo resist layer as a mask.

摘要翻译： 一种用于制造源极/漏极器件的方法。 半导体衬底上形成有栅极，在半导体衬底上的栅极的第一侧上形成第一掺杂区域，并且以半导体衬底上的栅极的第二侧上形成第二掺杂区域 使得第二掺杂区域与栅极分离预定距离。 在半导体衬底上形成图案化的光致抗蚀剂层，该半导体衬底在第二侧具有开口，暴露的栅极小于栅极宽度的一半。 使用图案化的光致抗蚀剂层作为掩模，将半导体衬底注入和退火以在栅极的第二侧上形成双重扩散区域。