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    Memory cell with enhanced read and write sense margins
    1.
    发明授权
    Memory cell with enhanced read and write sense margins 有权
    具有增强的读和写检测余量的存储单元

    公开(公告)号：US08199562B2

    公开(公告)日：2012-06-12

    申请号：US12961240

    申请日：2010-12-06

    申请人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    发明人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    IPC分类号： G11C11/00 ,  G11C11/14

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

    摘要翻译： 一种用于增强具有电阻感测元件（RSE）的存储单元中的读和写检测余量的装置和方法，所述电阻感测元件（RSE）例如但不限于电阻随机存取存储器（RRAM）元件或自旋转矩传递随机存取存储器 ）元素。 RSE具有硬编程方向和简单的编程方向。 写入电流应用在硬编程方向或简易编程方向上，以将RSE设置为选定的编程状态。 读取电路随后在硬编程方向上传递通过单元的读取感测电流以感测所选择的单元的编程状态。

    Enhancing Read and Write Sense Margins in a Resistive Sense Element
    2.
    发明申请
    Enhancing Read and Write Sense Margins in a Resistive Sense Element 有权
    增强电阻式感应元件中的读写读数边界

    公开(公告)号：US20110075471A1

    公开(公告)日：2011-03-31

    申请号：US12961240

    申请日：2010-12-06

    申请人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    发明人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    IPC分类号： G11C11/15

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

    摘要翻译： 一种用于增强具有电阻感测元件（RSE）的存储单元中的读和写检测余量的装置和方法，所述电阻感测元件（RSE）例如但不限于电阻随机存取存储器（RRAM）元件或自旋转矩传递随机存取存储器 ）元素。 RSE具有硬编程方向和简单的编程方向。 写入电流应用在硬编程方向或简易编程方向上，以将RSE设置为选定的编程状态。 读取电路随后在硬编程方向上传递通过单元的读取感测电流以感测所选择的单元的编程状态。

    Enhancing read and write sense margins in a resistive sense element
    3.
    发明授权
    Enhancing read and write sense margins in a resistive sense element 有权
    增强电阻感应元件中的读和写检测余量

    公开(公告)号：US07852660B2

    公开(公告)日：2010-12-14

    申请号：US12425856

    申请日：2009-04-17

    申请人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    发明人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C17/00

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

    摘要翻译： 一种用于增强具有电阻感测元件（RSE）的存储单元中的读和写检测余量的装置和方法，所述电阻感测元件（RSE）例如但不限于电阻随机存取存储器（RRAM）元件或自旋转矩传递随机存取存储器 ）元素。 RSE具有硬编程方向和简单的编程方向。 写入电流应用在硬编程方向或简易编程方向上，以将RSE设置为选定的编程状态。 读取电路随后在硬编程方向上传递通过单元的读取感测电流以感测所选择的单元的编程状态。

    Enhancing Read and Write Sense Margins in a Resistive Sense Element
    4.
    发明申请
    Enhancing Read and Write Sense Margins in a Resistive Sense Element 有权
    增强电阻式感应元件中的读写读数边界

    公开(公告)号：US20100085796A1

    公开(公告)日：2010-04-08

    申请号：US12425856

    申请日：2009-04-17

    申请人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    发明人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C7/00

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

    摘要翻译： 一种用于增强具有电阻感测元件（RSE）的存储单元中的读和写检测余量的装置和方法，所述电阻感测元件（RSE）例如但不限于电阻随机存取存储器（RRAM）元件或自旋转矩传递随机存取存储器 ）元素。 RSE具有硬编程方向和简单的编程方向。 写入电流应用在硬编程方向或简易编程方向上，以将RSE设置为选定的编程状态。 读取电路随后在硬编程方向上传递通过单元的读取感测电流以感测所选择的单元的编程状态。