公开(公告)号：US5946169A

公开(公告)日：1999-08-31

申请号：US949948

申请日：1997-10-13

申请人： William J. O'Kane ,  Gregory S. Mowry ,  Todd G. Backer ,  Herman C. Kluge

发明人： William J. O'Kane ,  Gregory S. Mowry ,  Todd G. Backer ,  Herman C. Kluge

IPC分类号： G01R33/09 ,  G11B5/39

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/399

摘要： A soft adjacent layer (SAL) vertically biased magnetoresistive (MR) sensor is disclosed. The SAL biased sensor includes at least three permanent magnet (PM) tabs (hereafter referred to as tabs). An MR sensor layer is disposed in relation to the tabs such that each of the tabs is spaced apart along a width of the MR sensor layer such that each of the tabs is in electrical and magnetic contact with the MR sensor layer to thereby stabilize the MR sensor layer. Preferably, a SAL is disposed in relation to the tabs such that each of the tabs is also spaced apart along a width of the SAL such that each of the tabs is in electrical and magnetic contact with the SAL. A spacer layer is formed between the MR sensor layer and the SAL.

摘要翻译： 公开了一种软相邻层（SAL）垂直偏置磁阻（MR）传感器。 SAL偏置传感器包括至少三个永磁体（PM）接头（以下称为接头）。 相对于突片设置MR传感器层，使得每个突片沿着MR传感器层的宽度间隔开，使得每个突片与MR传感器层电气和磁性接触，从而稳定MR 传感器层。 优选地，相对于突片设置SAL，使得每个突片也沿着SAL的宽度间隔开，使得每个突片与SAL电磁接触。 间隔层形成在MR传感器层和SAL之间。

公开(公告)号：US5665639A

公开(公告)日：1997-09-09

申请号：US200673

申请日：1994-02-23

申请人： Bryan R. Seppala ,  Todd G. Backer ,  Lothar Maier

发明人： Bryan R. Seppala ,  Todd G. Backer ,  Lothar Maier

IPC分类号： H01L21/60 ,  H01L21/283 ,  H01L21/58

CPC分类号： H01L24/11 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/14

摘要： A rapid thermal anneal (RTA) process minimizes the intermixing of materials between a bump and a bonding pad so as to provide for a more reliable and durable interconnect between the bump and the bonding pad and so as to allow the probing of wafers prior to bumping. A barrier layer is formed over the bonding pads of devices formed over a semiconductor substrate. Bumps are then formed over the bonding pads and are annealed for a short time at a high temperature so as to soften the bumps for later assembly in a semiconductor package. As a result of this quick annealing process, the intermixing of materials between the bumps and the bonding pads is minimized. This is so despite any decreased step coverage of the barrier layer over probe marks on the bonding pads which resulted from testing the wafer. Accordingly, wafers may now be tested prior to bumping, thus saving the cost, time, and process steps typically incurred in bumping wafers having a zero or low yield of properly functioning semiconductor devices.

摘要翻译： 快速热退火（RTA）工艺可最大限度地减少凸块和焊盘之间的材料的混合，以便在凸块和焊盘之间提供更可靠和耐用的互连，从而允许在碰撞之前探测晶圆 。 在半导体衬底上形成的器件的焊盘上形成阻挡层。 然后在接合焊盘上形成凸起，并在高温下短时间退火，以便软化凸块以便稍后在半导体封装中组装。 作为这种快速退火工艺的结果，在凸块和焊盘之间的材料的混合最小化。 尽管阻挡层在由测试晶片产生的焊盘上的探针标记上的阶跃覆盖度也是如此。 因此，现在可以在碰撞之前测试晶片，从而节省通常在具有零或低产率的正常工作的半导体器件的晶片中引起的成本，时间和工艺步骤。