公开(公告)号：US11257922B2

公开(公告)日：2022-02-22

申请号：US16374162

申请日：2019-04-03

Applicant: Winbond Electronics Corp.

Inventor： Sih-Han Chen ,  Chien-Ting Chen ,  Yao-Ting Tsai ,  Hsiu-Han Liao

IPC: H01L29/66 ,  H01L29/45 ,  H01L21/285

Abstract: A method for forming a self-aligned contact includes providing a substrate with a plurality of gate structures formed on the substrate. The method also includes forming a spacer liner on the gate structures and the substrate. The method also includes forming a sacrificial layer between the gate structures and on the gate structures. The method also includes forming a plurality of dielectric plugs through the sacrificial layer above the gate structures. The method also includes removing the sacrificial layer to form a plurality of contact openings between the gate structures. The method also includes forming an etch resistant layer conformally covering the sidewall and the bottom of the contact openings. The method also includes forming a plurality of contact plugs in the contact openings.