公开(公告)号：US11374011B1

公开(公告)日：2022-06-28

申请号：US17317886

申请日：2021-05-11

申请人： Winbond Electronics Corp.

发明人： Akira Kuroda ,  Hsin-Ya Wang ,  Chang-Han Tsai ,  Ming-Ting Cai

IPC分类号： H01L27/108

摘要： A method for manufacturing a DRAM includes: forming a hard mask layer on a substrate with an opening therein; forming a dielectric layer on a sidewall of the opening; forming a first barrier layer and a first conductor layer in the opening; performing a first dry etching and a first wet etching processes to respectively partially remove the first barrier layer and the first conductor layer, to expose the dielectric layer on upper sidewall; forming a second barrier layer in the opening; forming a mask layer in the opening to cover the second barrier layer; removing a part of the second barrier layer and the mask layer to expose the dielectric layer on the upper sidewall of the opening; and forming a second conductor layer in the opening.