公开(公告)号：US20100092875A1

公开(公告)日：2010-04-15

申请号：US12562691

申请日：2009-09-18

Applicant: Woo Jin Cho

Inventor： Woo Jin Cho

IPC: G03F1/00 ,  G03F7/20

CPC classification number: H01L27/14689 ,  G03F1/36 ,  H01L27/14607

Abstract: An exposure mask for forming a photodiode of an image sensor and a method of manufacturing an image sensor using the exposure mask may be disclosed. An exposure mask for forming a photodiode of an image sensor includes a plurality of main open patterns, each having a first open pattern that is rectangular and a second open pattern extending outward from at least one corner of the first open pattern, and an open serif extending outward from each of the corners of the second open pattern that do not overlap with the first open pattern, covering a predetermined area adjacent to the second open pattern.

Abstract translation: 可以公开用于形成图像传感器的光电二极管的曝光掩模和使用该曝光掩模的图像传感器的制造方法。 用于形成图像传感器的光电二极管的曝光掩模包括多个主开口图案，每个主开放图案具有矩形的第一开放图案和从第一开放图案的至少一个角向外延伸的第二开放图案，以及开放衬线 从与第一开放图案不重叠的第二开放图案的每个角落向外延伸，覆盖与第二打开图案相邻的预定区域。