公开(公告)号：US20220392949A1

公开(公告)日：2022-12-08

申请号：US17819693

申请日：2022-08-15

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Linrong CAI ,  Lixun YANG ,  Hsin-Yi TSENG ,  Liqin ZHU

IPC: H01L27/15

Abstract: A light-emitting diode device includes a substrate and at least one mesa structure disposed on the substrate. The substrate includes at least one light-emitting region-forming area and at least one dicing region-forming area that are spaced apart from each other. The at least one dicing region-forming area surrounds the at least one light-emitting region-forming area. The at least one mesa structure includes a light-emitting mesa disposed on the at least one light-emitting region-forming area, and a dicing mesa disposed on the at least one dicing region-forming area and surrounding the light-emitting mesa. A method for making the light-emitting diode device is also provided herein.