公开(公告)号：US11984877B2

公开(公告)日：2024-05-14

申请号：US17397001

申请日：2021-08-09

申请人： Xi'an M3 semiconductor INC

发明人： Nuo Lou ,  Bo Yang ,  Xiaoyu Xi ,  David Meng

IPC分类号： H03K17/0812

CPC分类号： H03K17/08122 ,  H03K2217/0081

摘要： An apparatus includes a transistor coupled to a load through an output terminal of a load switch IC, a gate drive circuit connected to a gate of the transistor, wherein the gate drive circuit is configured such that in a short circuit event, a voltage on the gate of the transistor is gradually reduced, and wherein as a result of reducing the voltage on the gate of the transistor gradually, a negative voltage occurring at the output terminal of the load switch IC is minimized.

公开(公告)号：US20230027110A1

公开(公告)日：2023-01-26

申请号：US17397001

申请日：2021-08-09

申请人： Xi'an M3 semiconductor INC

发明人： Nuo Lou ,  Bo Yang ,  Xiaoyu Xi ,  David Meng

IPC分类号： H03K17/0812

摘要： An apparatus includes a transistor coupled to a load through an output terminal of a load switch IC, a gate drive circuit connected to a gate of the transistor, wherein the gate drive circuit is configured such that in a short circuit event, a voltage on the gate of the transistor is gradually reduced, and wherein as a result of reducing the voltage on the gate of the transistor gradually, a negative voltage occurring at the output terminal of the load switch IC is minimized.