公开(公告)号：US20220059579A1

公开(公告)日：2022-02-24

申请号：US17517455

申请日：2021-11-02

Applicant: Xiamen Tianma Micro-Electronics Co.,Ltd.

Inventor： Guofeng Zhang ,  Yong Yuan

IPC: H01L27/12

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor including a first active layer including silicon, a first gate, a first source and a first drain; a second transistor including a second active layer including an oxide semiconductor, a second gate located on a side of the second active layer facing away from the base substrate, a second source and a second drain; a first insulating layer including an inorganic material; and a planarization layer including an organic material. The first insulating layer includes a first insulating sublayer and a second insulating sublayer. The second insulating sublayer is located on a side of the first insulating sublayer facing away from the base substrate, and a compactness of the second insulating sublayer is greater than a compactness of the first insulating sublayer.

公开(公告)号：US12170292B2

公开(公告)日：2024-12-17

申请号：US17517455

申请日：2021-11-02

Applicant: Xiamen Tianma Micro-Electronics Co., Ltd.

Inventor： Guofeng Zhang ,  Yong Yuan

IPC: H01L27/12

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor including a first active layer including silicon, a first gate, a first source and a first drain; a second transistor including a second active layer including an oxide semiconductor, a second gate located on a side of the second active layer facing away from the base substrate, a second source and a second drain; a first insulating layer including an inorganic material; and a planarization layer including an organic material. The first insulating layer includes a first insulating sublayer and a second insulating sublayer. The second insulating sublayer is located on a side of the first insulating sublayer facing away from the base substrate, and a compactness of the second insulating sublayer is greater than a compactness of the first insulating sublayer.