公开(公告)号：US20250013154A1

公开(公告)日：2025-01-09

申请号：US18830633

申请日：2024-09-11

Applicant: YCCHEM CO., LTD.

Inventor： Su Jin LEE ,  Gi Hong KIM ,  Jeong Hun LEE ,  Seung Hun LEE ,  Seung Hyun LEE

IPC: G03F7/11 ,  G03F7/16 ,  H01L21/027 ,  H01L21/308

Abstract: The present invention relates to a spin-on carbon hard mask composition with higher planarization performance, which is useful in semiconductor lithography processes, and a patterning method using same. The composition according to the present invention contains the 3′,6′-Dihydroxy-3H-spiro[2-benzofuran-1,9′-xanthen]-3-one derivative polymer represented by the following chemical formula 1, an organic solvent, and a surfactant and exhibits excellent effects including excellent solubility, uniform coating performance, high etch-resistance enduring multi-etch processes, excellent mechanical properties, and high planarization properties.