摘要:
A system and method for developing condensed netlists for sub-circuits within an integrated circuit and for modeling the performance of the integrated circuit based on the condensed netlists rather than full netlists. An IC layout is segmented into a plurality of sub-circuits, each comprising a group of one or more of a given type of active devices connected to (i.e., sharing) the same electrical sub-circuit terminals through a similar resistive network (i.e. such that they are subjected to approximately the same overall combined parasitic resistances). Full netlists corresponding to the sub-circuits are extracted from the layout and condensed. Each condensed netlist accounts for performance variations (e.g., as a function of variations in operating power supply voltages, operating temperatures and, optionally, self-heating and/or stress) exhibited by the active devices and resistive network in a sub-circuit. The condensed netlists for the sub-circuits are then simulated over the full range of operating temperatures and full range of operating power supply voltages for the integrated circuit in order to generate a performance model for the integrated circuit.
摘要:
A system and method for developing condensed netlists for sub-circuits within an integrated circuit and for modeling the performance of the integrated circuit based on the condensed netlists rather than full netlists. An IC layout is segmented into a plurality of sub-circuits, each comprising a group of one or more of a given type of active devices connected to (i.e., sharing) the same electrical sub-circuit terminals through a similar resistive network (i.e. such that they are subjected to approximately the same overall combined parasitic resistances). Full netlists corresponding to the sub-circuits are extracted from the layout and condensed. Each condensed netlist accounts for performance variations (e.g., as a function of variations in operating power supply voltages, operating temperatures and, optionally, self-heating and/or stress) exhibited by the active devices and resistive network in a sub-circuit. The condensed netlists for the sub-circuits are then simulated over the full range of operating temperatures and full range of operating power supply voltages for the integrated circuit in order to generate a performance model for the integrated circuit.
摘要:
Disclosed are embodiments of a method, system and program storage device for generating accurate performance targets for active semiconductor devices during technology node development in order to reduce the number of iterations required for model extraction and/or to improve model quality. In these embodiments, initial sets of performance targets for related semiconductor devices are generated, e.g., by making assumptions based on hardware measurements taken from semiconductor devices in prior technology nodes. Additional processes are then performed on the initial sets of performance targets prior to the modeling stage in order to detect and resolve any inconsistencies between the data in the sets. Specifically, plotting techniques are performed with respect to the performance targets. The results are analyzed to detect any inconsistencies indicating that the performance targets are inaccurate and adjustments are made to the performance targets in order to resolve those inconsistencies.
摘要:
Disclosed are embodiments of a method, system and program storage device for generating accurate performance targets for active semiconductor devices during technology node development in order to reduce the number of iterations required for model extraction and/or to improve model quality. In these embodiments, initial sets of performance targets for related semiconductor devices are generated, e.g., by making assumptions based on hardware measurements taken from semiconductor devices in prior technology nodes. Additional processes are then performed on the initial sets of performance targets prior to the modeling stage in order to detect and resolve any inconsistencies between the data in the sets. Specifically, plotting techniques are performed with respect to the performance targets. The results are analyzed to detect any inconsistencies indicating that the performance targets are inaccurate and adjustments are made to the performance targets in order to resolve those inconsistencies.
摘要:
Disclosed herein are embodiments of an automated, fast and efficient method of generating a customized compact model that represents a semiconductor device at the chip, wafer or multi-wafer level in a specific manufacturing environment. Specifically, measurement data is collected from a specific manufacturing environment and sorted by channel lengths. Then, an optimizer is used to generate customized modeling parameters based on the measurement data. The optimization processes is a multi-step process. First, a first set of modeling parameters is generated based on measurement data associated with a long channel length. Second, a second set of modeling parameters is generated based on the first set and on measurement data associated with a short channel length. Finally, the customized modeling parameters are generated based on both the first set and the second set. The customized modeling parameters are used to generate a customized compact device model representative of the specific manufacturing environment.
摘要:
Disclosed herein are embodiments of an automated, fast and efficient method of generating a customized compact model that represents a semiconductor device at the chip, wafer or multi-wafer level in a specific manufacturing environment. Specifically, measurement data is collected from a specific manufacturing environment and sorted by channel lengths. Then, an optimizer is used to generate customized modeling parameters based on the measurement data. The optimization processes is a multi-step process. First, a first set of modeling parameters is generated based on measurement data associated with a long channel length. Second, a second set of modeling parameters is generated based on the first set and on measurement data associated with a short channel length. Finally, the customized modeling parameters are generated based on both the first set and the second set. The customized modeling parameters are used to generate a customized compact device model representative of the specific manufacturing environment.
摘要:
An extraction, simulation, and analysis combined method is employed to account for the parasitic couplings from interconnect wires. Variations of parasitic resistance, capacitance, and inductance are used in circuit analysis calculators, including considering the variations of the parasitics on worst case circuit performance, skewing, and statistical Monte Carlo analysis. Each parasitic element is modeled as a call-up function with associated process distributions. Circuit analysis, such as a SPICE analysis is performed on the selected models.