公开(公告)号：US07498593B2

公开(公告)日：2009-03-03

申请号：US10550620

申请日：2004-03-24

申请人： Yao-chun Shen ,  Edmund H. Linfield ,  Alexander G. Davies

发明人： Yao-chun Shen ,  Edmund H. Linfield ,  Alexander G. Davies

IPC分类号： A61N5/06 ,  G01J3/10 ,  H05G2/00

CPC分类号： H01S1/02 ,  G01N21/3586 ,  H01L33/0004 ,  H01Q3/2676 ,  H01Q19/10

摘要： The invention relates to improved terahertz radiation sources and associated methods. A terahertz radiation source is described, comprising: an emitter (202) comprising a semiconductor material (12); a pair of electrodes (204a,b) adjacent a face of said semiconductor, said pair of electrodes defining a gap between said electrodes; a pulsed light source input for illuminating said semiconductor to excite photo-carriers in said semiconductor to generate terahertz radiation; and a radiation collector (212) to collect said terahertz radiation; and wherein said radiation collector is disposed on the same side of said semiconductor as said electrodes. A related method of providing terahertz radiation is also described.

摘要翻译： 本发明涉及改进的太赫兹辐射源和相关方法。 描述了一种太赫兹辐射源，包括：包括半导体材料（12）的发射器（202）; 与所述半导体的表面相邻的一对电极（204a，b），所述一对电极限定所述电极之间的间隙; 用于照亮所述半导体以激发所述半导体中的光载流子以产生太赫兹辐射的脉冲光源输入; 和收集所述太赫兹辐射的辐射收集器（212）; 并且其中所述辐射收集器设置在所述半导体与所述电极相同的一侧上。 还描述了提供太赫兹辐射的相关方法。

公开(公告)号：US20070034813A1

公开(公告)日：2007-02-15

申请号：US10550620

申请日：2004-03-24

申请人： Yao-chun Shen ,  Edmund Linfield ,  Alexander Davies

发明人： Yao-chun Shen ,  Edmund Linfield ,  Alexander Davies

IPC分类号： G21G4/00

CPC分类号： H01S1/02 ,  G01N21/3586 ,  H01L33/0004 ,  H01Q3/2676 ,  H01Q19/10

摘要： The invention relates to improved terahertz radiation sources and associated methods. A terahertz radiation source is described, comprising: an emitter (202) comprising a semiconductor material (12); a pair of electrodes (204a,b) adjacent a face of said semiconductor, said pair of electrodes defining a gap between said electrodes; a pulsed light source input for illuminating said semiconductor to excite photo-carriers in said semiconductor to generate terahertz radiation; and a radiation collector (212) to collect said terahertz radiation; and wherein said radiation collector is disposed on the same side of said semiconductor as said electrodes. A related method of providing terahertz radiation is also described.

摘要翻译： 本发明涉及改进的太赫兹辐射源和相关方法。 描述了一种太赫兹辐射源，包括：包括半导体材料（12）的发射器（202）; 与所述半导体的表面相邻的一对电极（204a，b），所述一对电极限定所述电极之间的间隙; 用于照亮所述半导体以激发所述半导体中的光载流子以产生太赫兹辐射的脉冲光源输入; 和收集所述太赫兹辐射的辐射收集器（212）; 并且其中所述辐射收集器设置在所述半导体与所述电极相同的一侧上。 还描述了提供太赫兹辐射的相关方法。