公开(公告)号：US20070189078A1

公开(公告)日：2007-08-16

申请号：US11736129

申请日：2007-04-17

申请人： Yasuhiko TAITO ,  Naoki OTANI ,  Kayoko OMOTO ,  Kenji KODA

发明人： Yasuhiko TAITO ,  Naoki OTANI ,  Kayoko OMOTO ,  Kenji KODA

IPC分类号： G11C16/04

CPC分类号： G11C16/3495 ,  G11C16/3418 ,  G11C16/349

摘要： A semiconductor flash memory includes an erase/write control unit that, when performing an erase/write operation of read memory cells, reads and senses memory current of the read memory cells for each memory cell, and adjusts threshold voltage of each of the read memory cells to a predetermined value, and a readout control unit that, when performing a read operation, selects at least two read memory cell simultaneously from among the read memory cells to which the erase/write control unit stored the same data, and senses total memory current for the at least two read memory cells

摘要翻译： 半导体闪速存储器包括擦除/写入控制单元，当执行读取存储器单元的擦除/写入操作时，读取和检测每个存储单元的读取的存储器单元的存储器电流，并且调整每个读取存储器的阈值电压 单元到预定值，以及读出控制单元，当执行读取操作时，从擦除/写入控制单元存储相同数据的读取存储器单元中同时选择至少两个读取存储单元，并且感测总存储器 用于至少两个读存储器单元的电流