公开(公告)号：US07912010B2

公开(公告)日：2011-03-22

申请号：US11870389

申请日：2007-10-10

申请人： Yasuyuki Ito ,  Yuzuru Kawamura ,  Yuji Yanagisawa

发明人： Yasuyuki Ito ,  Yuzuru Kawamura ,  Yuji Yanagisawa

IPC分类号： H04W4/00

CPC分类号： H04W36/08 ,  H04W36/30

摘要： A control unit of a wireless connection terminal compares the received signal strength indicator of an access point currently connected to by the wireless connection terminal with the received signal strength indicator of a neighboring access point. If the difference between the two received signal strength indicators is higher than or equal to 40%, the connection to the current access point is severed and roaming in which the connection is switched to the neighboring access point is performed. Even when the difference between the two received signal strength indicators is not higher than or equal to 40%, roaming in which the connection is switched to the neighboring access point is performed if the received signal strength indicator of the access point to which the wireless connection terminal is currently connected becomes lower than or equal to 20%.

摘要翻译： 无线连接终端的控制单元将由无线连接终端当前连接的接入点的接收信号强度指示符与相邻接入点的接收信号强度指示符进行比较。 如果两个接收信号强度指示符之间的差异大于或等于40％，则切断与当前接入点的连接并且连接切换到相邻接入点的漫游。 即使当两个接收信号强度指示符之间的差别不高于或等于40％时，如果无线连接的接入点的接收信号强度指示符被执行，则连接切换到相邻接入点的漫游 当前连接的终端变为低于或等于20％。

公开(公告)号：US20120298031A1

公开(公告)日：2012-11-29

申请号：US13521524

申请日：2010-12-28

申请人： Toshimitsu Ito ,  Yasuhide Tomioka ,  Yuji Yanagisawa ,  Isamu Shindo ,  Atsushi Yanase

发明人： Toshimitsu Ito ,  Yasuhide Tomioka ,  Yuji Yanagisawa ,  Isamu Shindo ,  Atsushi Yanase

IPC分类号： C30B13/24

CPC分类号： C30B13/24 ,  Y10T117/1088

摘要： [Technical Problem]It is an object to provide a device for a single-crystal growth and a method of a single-crystal growth in which even when materials that are different in, for example, a melting point or a diameter are to be grown, the conditions for the stable growth of a single crystal can be obtained and a high-quality single crystal having a desired diameter can hence be grown. In addition, the device and the method have a reduced fluctuation of heating intensity to facilitate a crystal growth.[Solution of Problem]A device for a single-crystal growth is provided with a raw material rod (14) that is supported by an upper crystal driving shaft (8), a seed crystal rod (16) that is supported by a lower crystal driving shaft (12), and a heating means, and a contact part of the raw material rod (14) with the seed crystal rod (16) is heated with a heating means to form a melting zone (18) and grow a single crystal. The device is characterized in that the heating means is configured by a plurality of rectangular beams produced by lasers (2a, . . . 2e) which emit a laser light having the equivalent irradiation intensity and by an optical means, the heating means being disposed in a circumferential direction of the melting zone (18).

摘要翻译： 技术问题本发明的目的是提供一种单晶生长装置和单晶生长方法，其中即使在例如熔点或直径不同的材料生长时 ，可以获得单晶稳定生长的条件，因此可以生长具有期望直径的高质量单晶。 此外，该装置和方法具有降低的加热强度波动以促进晶体生长。 问题的解决方案用于单晶生长的装置设置有由上晶体驱动轴（8）支撑的原料棒（14），由下晶体支撑的晶种棒（16） 驱动轴（12）和加热装置，原料棒（14）与籽晶杆（16）的接触部分用加热装置加热以形成熔化区（18）并生长单晶 。 该装置的特征在于，加热装置由发射具有等效照射强度的激光的激光器（2a，...，2e）产生的多个矩形光束构成，并且通过光学装置，加热装置设置在 熔融区（18）的圆周方向。