公开(公告)号：US06261893B1

公开(公告)日：2001-07-17

申请号：US09686932

申请日：2000-10-12

申请人： Yen-Jung Chang ,  Yi-Chuan Yang ,  Jun-Jei Huang ,  Mo-Chung Tseng

发明人： Yen-Jung Chang ,  Yi-Chuan Yang ,  Jun-Jei Huang ,  Mo-Chung Tseng

IPC分类号： H01L218242

CPC分类号： H01L27/222 ,  B82Y10/00

摘要： The present invention relates to a method for forming a magnetic layer of magnetic random access memory. In short, the method comprises following steps: providing a substrate; forming metal structures on substrate; forming a stop layer on substrate and mostly conformally covers metal structures; forming a buffer layer which mostly conformally covers stop layer; forming a dielectric layer on buffer layer where thickness of dielectric layer is larger than height of metal structures; planarizing the surface of said dielectric layer; and forming a magnetic layer on dielectric layer. Moreover, some essential key-points of the method are dielectric layer is more sensitive to said stop layer than buffer layer and gap fill ability of dielectric layer is better than gap fill ability of buffer layer.

摘要翻译： 本发明涉及磁性随机存取存储器的磁性层形成方法。 简而言之，该方法包括以下步骤：提供衬底; 在基底上形成金属结构; 在基材上形成停留层，大部分保形覆盖金属结构; 形成大致保守地覆盖停止层的缓冲层; 在介质层厚度大于金属结构高度的缓冲层上形成介电层; 平坦化所述介电层的表面; 并在电介质层上形成磁性层。 此外，该方法的一些基本关键点是介电层比缓冲层对所述停止层更敏感，并且介电层的间隙填充能力优于缓冲层的间隙填充能力。