公开(公告)号：US06777676B1

公开(公告)日：2004-08-17

申请号：US10303267

申请日：2002-11-21

申请人： Ying Wang ,  Yeishin Tung ,  Anne Testoni

发明人： Ying Wang ,  Yeishin Tung ,  Anne Testoni

IPC分类号： G01N2300

CPC分类号： G01N23/225 ,  H01J2237/2561

摘要： Disclosed are apparatus and methods for characterizing a potential defect of a semiconductor structure. A charged particle beam is scanned over a structure which has a potential defect. X-rays are detected from the scanned structure. The X-rays are in response to the charged particle beam being scanned over the structure. The potential defect of the scanned structure is characterized based on the detected X-rays. For example, it may be determined whether a potentially defective via has a SiO2 plug defect by comparing an X-ray count ratio of oxygen over silicon of the defective via with an X-ray count ratio of a known defect-free reference via. If the defective via has a relatively high ratio (more oxygen than silicon) as compared to the reference via, then it may be determined that a SiO2 plug defect is present within the defective via. Otherwise, the via may be defmed as having a different type of defect (e.g., not a SiO2 plug defect) or defined resulting in a “false” defect. Accordingly, specific embodiments of the present invention may be utilized to filter “false” defects from a defect sample.

摘要翻译： 公开了用于表征半导体结构的潜在缺陷的装置和方法。 带电粒子束在具有潜在缺陷的结构上扫描。 从扫描结构检测X射线。 X射线响应于在结构上扫描的带电粒子束。 基于检测到的X射线来表征扫描结构的潜在缺陷。 例如，可以通过将有缺陷的通孔的硅上的氧的X射线计数比与已知的无缺陷参考通孔的X射线计数比进行比较，来确定潜在缺陷通孔是否具有SiO 2插塞缺陷。 如果故障通孔与参考通孔相比具有相对高的比率（比硅更多的氧），则可以确定在缺陷通孔内存在SiO 2插塞缺陷。 否则，可以将通孔定义为具有不同类型的缺陷（例如，不是SiO2插塞缺陷）或定义导致“假”缺陷。 因此，可以利用本发明的具体实施例来从缺陷样品中过滤“假”缺陷。