公开(公告)号：US07377984B2

公开(公告)日：2008-05-27

申请号：US11624275

申请日：2007-01-18

申请人： Yong Dae Kim ,  Jong Min Kim ,  Han Byul Kang ,  Hyun Joon Cho ,  Sang Soo Choi

发明人： Yong Dae Kim ,  Jong Min Kim ,  Han Byul Kang ,  Hyun Joon Cho ,  Sang Soo Choi

IPC分类号： B08B3/04

CPC分类号： G03F1/82

摘要： Disclosed herein is a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.

摘要翻译： 本文公开了一种清洁光掩模的方法，其防止在光刻工艺期间在光掩模的表面上产生雾度。 光掩模被热处理以除去其表面上的残余离子并引起Cr和MoSiON层的固化和氧化，从而防止离子的扩散。 抑制由于清洗过程而导致的Cr和MoSiON层的蚀刻，以显着地减少Cr和MoSiON的光学性质的相位变化和透射率。

公开(公告)号：US07186301B2

公开(公告)日：2007-03-06

申请号：US11276974

申请日：2006-03-20

申请人： Yong Dae Kim ,  Jong Min Kim ,  Han Byul Kang ,  Hyun Joon Cho ,  Sang Soo Choi

发明人： Yong Dae Kim ,  Jong Min Kim ,  Han Byul Kang ,  Hyun Joon Cho ,  Sang Soo Choi

IPC分类号： B08B3/00

CPC分类号： H01L21/67207 ,  G03F1/32 ,  G03F1/82

摘要： Disclosed herein is a device and a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.

摘要翻译： 本文公开了一种清洁光掩模的装置和方法，其防止在光刻工艺期间在光掩模的表面上产生雾度。 光掩模被热处理以除去其表面上的残余离子并引起Cr和MoSiON层的固化和氧化，从而防止离子的扩散。 抑制由于清洗过程而导致的Cr和MoSiON层的蚀刻，以显着地减少Cr和MoSiON的光学性质的相位变化和透射率。

公开(公告)号：US20060257752A1

公开(公告)日：2006-11-16

申请号：US11277182

申请日：2006-03-22

申请人： Yong Dae Kim ,  Jong Min Kim ,  Han Byul Kang ,  Hyun Joon Cho ,  Sang Soo Choi

发明人： Yong Dae Kim ,  Jong Min Kim ,  Han Byul Kang ,  Hyun Joon Cho ,  Sang Soo Choi

IPC分类号： G03F1/00

CPC分类号： G03F1/32

摘要： Disclosed is a phase shift mask. Residual ions, which are considered a factor of occurrence of haze which is a growth defect of a surface of a photomask during a photolithography step of a wafer process, are controlled in order to change the content of a surface of the phase shift mask. Diffusion of the residual ions into the surface of the mask is suppressed during a photomask wet cleaning process in order to prevent the haze.

摘要翻译： 公开了一种相移掩模。 被认为是在晶片工艺的光刻步骤期间作为光掩模的表面的生长缺陷的雾度的发生因素的残留离子被控制以改变相移掩模的表面的含量。 为了防止雾度，在光掩模湿式清洗过程中抑制残留离子进入掩模表面的扩散。