摘要:
A method for forming a contact in a semiconductor device, comprises providing a substrate, forming a plurality of conductive patterns and a passivation layer surrounding the conductive patterns over the substrate, forming an insulation layer covering the conductive patterns and passivation layer, forming a mask pattern for a contact over the insulation layer, forming a first opening by performing an isotropic etch process on the insulation layer using the mask pattern as an etch mask, wherein the isotropic etch process is performed until the insulation layer meets the passivation layer, forming a barrier layer over a resultant structure of the first opening, exposing the insulation layer by performing an anisotropic etch process using the mask pattern as an etch mask, and forming a second opening exposing the substrate by performing a self aligned contact (SAC) process using the mask pattern and barrier layer as an etch mask.
摘要:
An array substrate for a liquid crystal display device includes: a substrate; a gate line and a data line on the substrate; a common line parallel to and spaced apart from the gate line; a thin film transistor connected to the gate line and the data line; a plurality of pixel electrodes in the pixel region; a plurality of common electrodes alternating with the plurality of pixel electrodes; at least one outermost common electrode at an edge portion of the pixel region; a black matrix corresponding to the thin film transistor, the gate line and the data line, the black matrix including an inorganic material and having an open portion; and a color filter layer in the open portion.