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1.发明授权Methods of fabricating vertical semiconductor device utilizing phase changes in semiconductor materials 有权使用半导体材料相变的垂直半导体器件的制造方法公开(公告)号：US08236673B2
公开(公告)日：2012-08-07
申请号：US13024924
申请日：2011-02-10
申请人： Yong-hoon Son , Jin-ha Jeong , Jung-ho Kim , Vladimir Urazaev , Jong-hyuk Kang , Sung-woo Hyun
发明人： Yong-hoon Son , Jin-ha Jeong , Jung-ho Kim , Vladimir Urazaev , Jong-hyuk Kang , Sung-woo Hyun
IPC分类号： H01L21/20
CPC分类号： H01L21/20
摘要： A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second preliminary semiconductor layer on the first single crystalline semiconductor layer. The phase of the second preliminary semiconductor layer is changed from solid to liquid to form a second single crystalline semiconductor layer that combines with the first single crystalline semiconductor layers to form a single crystalline semiconductor layer in the opening.
摘要翻译： 制造垂直NAND半导体器件的方法可以包括将开口中的第一初级半导体层的相位从固体改变为在开口中形成第一单晶半导体层，然后在第一单个晶体管上形成第二初步半导体层 晶体半导体层。 第二初步半导体层的相位从固体变为液态，形成与第一单晶半导体层结合以在开口中形成单晶半导体层的第二单晶半导体层。
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2.发明申请METHODS OF FABRICATING VERTICAL SEMICONDUCTOR DEVICE UTILIZING PHASE CHANGES IN SEMICONDUCTOR MATERIALS 有权在半导体材料中利用相变的垂直半导体器件制造方法公开(公告)号：US20110217828A1
公开(公告)日：2011-09-08
申请号：US13024924
申请日：2011-02-10
申请人： Yong-hoon Son , Jin-ha Jeong , Jung-ho Kim , Vladimir Urazaev , Jong-hyuk Kang , Sung-woo Hyun
发明人： Yong-hoon Son , Jin-ha Jeong , Jung-ho Kim , Vladimir Urazaev , Jong-hyuk Kang , Sung-woo Hyun
IPC分类号： H01L21/20
CPC分类号： H01L21/20
摘要： A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second preliminary semiconductor layer on the first single crystalline semiconductor layer. The phase of the second preliminary semiconductor layer is changed from solid to liquid to form a second single crystalline semiconductor layer that combines with the first single crystalline semiconductor layers to form a single crystalline semiconductor layer in the opening.
摘要翻译： 制造垂直NAND半导体器件的方法可以包括将开口中的第一初级半导体层的相位从固体改变为在开口中形成第一单晶半导体层，然后在第一单个晶体管上形成第二初步半导体层 晶体半导体层。 第二初步半导体层的相位从固体变为液态，形成与第一单晶半导体层结合以在开口中形成单晶半导体层的第二单晶半导体层。
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