公开(公告)号：US20100210094A1

公开(公告)日：2010-08-19

申请号：US12707193

申请日：2010-02-17

申请人： Yoshikazu FURUSAWA ,  Mitsuhiro Okada

发明人： Yoshikazu FURUSAWA ,  Mitsuhiro Okada

IPC分类号： H01L21/205

CPC分类号： C23C16/4405 ,  C23C16/24 ,  C23C16/28 ,  Y02C20/30 ,  Y02P70/605

摘要： A method for using an apparatus configured to form a germanium-containing film includes performing a first film formation process for forming a first product film containing germanium by CVD on a product target object placed inside a reaction container, a first cleaning process for etching the film formation by-product, a second cleaning process for removing residual germanium from inside the reaction container, and a second film formation process for forming a second product film containing no germanium by CVD on a product target object placed inside the reaction container, in this order. The second cleaning process is performed by exhausting gas from inside the reaction container with no product target object placed therein, supplying a second cleaning gas containing an oxidizing gas and hydrogen gas into the reaction container, and heating an interior of the reaction container thereby activating the second cleaning gas.

摘要翻译： 使用被配置为形成含锗膜的装置的方法包括：在反应容器内部的产品目标物体上进行用于通过CVD形成含有锗的第一产品膜的第一成膜工艺，用于蚀刻该膜的第一清洁工艺 形成副产物，用于从反应容器内部除去残留的锗的第二清洗方法，以及第二成膜方法，用于在反应容器内放置的产品目标物体上通过CVD形成不含锗的第二产品膜，按顺序 。 第二清洗处理是通过从反应容器内部排出不产生目标物的气体，向反应容器供给含有氧化性气体和氢气的第二清洗气体，加热反应容器的内部，从而使 第二次清洗气体。