Magnetoresistance effect element and production method and application method therefor same
    3.
    发明申请
    Magnetoresistance effect element and production method and application method therefor same 审中-公开
    磁阻效应元件及其制作方法及应用方法相同

    公开(公告)号:US20060164204A1

    公开(公告)日:2006-07-27

    申请号:US10527238

    申请日:2003-09-12

    IPC分类号: H01C10/50

    摘要: A magneto-resistive element includes: a metal artificial lattice film (4) in which a magnetic thin film and a non-magnetic metal thin film are alternately laminated in at least two layers on a part of a substrate (1) and formed into a predetermined pattern; a first protective layer (5) covering the metal artificial lattice film (4); and a second protective layer (6) formed on the first protective layer (5). The residual stress of the first protective layer (5) is substantially zero. The second protective layer (6) is made of a material rejecting water. This structure can achieve a magneto-resistive element that has no hysteresis and small deterioration of the characteristics even at high temperatures, and has excellent heat resistance and corrosion resistance. Thus, this element can be used in sever environments, such as in an automobile.

    摘要翻译: 磁阻元件包括:金属人造晶格膜(4),其中磁性薄膜和非磁性金属薄膜在基板(1)的一部分上至少两层交替层叠并形成为 预定图案; 覆盖金属人造晶格膜(4)的第一保护层(5); 和形成在第一保护层(5)上的第二保护层(6)。 第一保护层(5)的残余应力基本为零。 第二保护层(6)由拒水的材料制成。 该结构可以实现即使在高温下也没有迟滞和特性劣化的磁阻元件,并且具有优异的耐热性和耐腐蚀性。 因此,该元件可以用于诸如汽车的严酷环境中。