公开(公告)号：US20060145334A1

公开(公告)日：2006-07-06

申请号：US10559923

申请日：2004-04-23

申请人： Yoshinari Tsukada ,  Kimio Hachisuka ,  Hiroshi Yarita ,  Fumitomo Takano ,  Ysuro Yamanaka

发明人： Yoshinari Tsukada ,  Kimio Hachisuka ,  Hiroshi Yarita ,  Fumitomo Takano ,  Ysuro Yamanaka

IPC分类号： H01L23/34

CPC分类号： H01L23/373 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes an intermediate layer provided between a semiconductor element and a heat sink. The intermediate layer moderates thermal stress resulting from a difference between thermal expansion of the semiconductor element and thermal expansion of the heat sink arising due to heat produced by the semiconductor element. This thermal stress moderation reduces warping of the semiconductor device as a whole.

摘要翻译： 半导体器件包括设置在半导体元件和散热器之间的中间层。 中间层缓和由于半导体元件的热膨胀和由于半导体元件产生的热而引起的散热器的热膨胀之间的差异导致的热应力。 这种热应力调节减少了整个半导体器件的翘曲。