Semiconductor integrated device having solid-state image sensor packaged within and production method for same
    1.
    发明授权
    Semiconductor integrated device having solid-state image sensor packaged within and production method for same 有权
    具有固态图像传感器的半导体集成器件封装在其内部及其制造方法中

    公开(公告)号:US07361525B2

    公开(公告)日:2008-04-22

    申请号:US10530095

    申请日:2003-11-14

    IPC分类号: H01L21/00

    摘要: A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected to a pad electrode and an other end extended to a side edge of the semiconductor substrate; a second wiring arranged to go around a side face of the semiconductor substrate, and connected to the first wiring; and a sealing member which seals the solid-state image sensor.

    摘要翻译: 半导体集成器件包括:遮光半导体集成器件的转印部分的至少一部分光的遮光膜; 形成在与所述遮光膜相同的层中的第一布线,其一端连接到焊盘电极,另一端延伸到所述半导体基板的侧边缘; 布置成绕着半导体衬底的侧面并连接到第一布线的第二布线; 以及密封固态图像传感器的密封构件。