公开(公告)号：US20120163034A1

公开(公告)日：2012-06-28

申请号：US13333167

申请日：2011-12-21

申请人： Young Joo KIM ,  Ho Jae Lee ,  Min Kim ,  Ki Soo Kim

发明人： Young Joo KIM ,  Ho Jae Lee ,  Min Kim ,  Ki Soo Kim

IPC分类号： H02M3/24

CPC分类号： H02M3/33523 ,  H02M2001/0045 ,  H02M2001/007

摘要： There is provided a switching mode power supply having multiple outputs, including: a DC/DC converter converting a DC voltage level according to a change in a load and including a primary coil and a secondary coil; a boost unit boosting an output voltage of the DC/DC converter in a first mode and outputting the boosted output voltage to an output terminal; a bypass unit bypassing the output voltage of the DC/DC converter in a second mode, to output the bypassed voltage to the output terminal; and a boosting controller controlling the boost unit according to a voltage detected at a center tab of the secondary coil of the DC/DC converter.

摘要翻译： 提供具有多个输出的开关模式电源，包括：DC / DC转换器，其根据负载的变化而转换DC电压电平，并且包括初级线圈和次级线圈; 升压单元，以第一模式提升DC / DC转换器的输出电压，并将升压的输出电压输出到输出端子; 在第二模式中绕过DC / DC转换器的输出电压的旁路单元，将旁路电压输出到输出端子; 以及升压控制器，其根据在DC / DC转换器的次级线圈的中心突片处检测到的电压来控制升压单元。

公开(公告)号：US20130147544A1

公开(公告)日：2013-06-13

申请号：US13451473

申请日：2012-04-19

申请人： Young Joo KIM ,  Jong Ho SON

发明人： Young Joo KIM ,  Jong Ho SON

IPC分类号： G05F3/02

CPC分类号： G05F3/242

摘要： A reference voltage generation circuit configured to generate a reference voltage level that is compensated for based on an internal temperature change, where the reference voltage level is adjusted based on a resistance value controlled in response to a control signal.

摘要翻译： 参考电压产生电路，被配置为基于内部温度变化产生补偿的参考电压电平，其中基于响应于控制信号控制的电阻值来调整基准电压电平。

公开(公告)号：US20130147545A1

公开(公告)日：2013-06-13

申请号：US13452066

申请日：2012-04-20

申请人： Young Joo KIM

发明人： Young Joo KIM

IPC分类号： G05F3/02

CPC分类号： G11C5/147 ,  G11C29/12005

摘要： A reference voltage generation circuit includes a current source configured to generate a current by compensating for an internal temperature change, and output the generated current to an output node where a reference voltage is generated, and a resistor unit coupled to the output node and having a resistance value controlled in response to a control signal generated in a test mode.

摘要翻译： 参考电压产生电路包括：电流源，被配置为通过补偿内部温度变化来产生电流，并将产生的电流输出到产生参考电压的输出节点;以及电阻器单元，耦合到输出节点并具有 响应于在测试模式下产生的控制信号而控制电阻值。

公开(公告)号：US20130033952A1

公开(公告)日：2013-02-07

申请号：US13412776

申请日：2012-03-06

申请人： Young Joo KIM

发明人： Young Joo KIM

IPC分类号： G11C5/14

CPC分类号： G11C5/145

摘要： A semiconductor memory device includes: a reference voltage generation unit configured to generate first and second reference voltages, wherein a level of the first reference voltage increases with decreasing internal temperature, and a level of the second reference voltage decreases with decreasing internal temperature; and a level control unit configured to control an internal voltage in response to the first and second reference voltages so as to decrease the absolute value of the internal voltage.

摘要翻译： 半导体存储器件包括：参考电压生成单元，被配置为产生第一和第二参考电压，其中第一参考电压的电平随着内部温度的降低而增加，并且第二参考电压的电平随着内部温度的降低而降低; 以及电平控制单元，被配置为响应于第一和第二参考电压来控制内部电压，以便降低内部电压的绝对值。

公开(公告)号：US20110133199A1

公开(公告)日：2011-06-09

申请号：US12985144

申请日：2011-01-05

申请人： Su-Hyuk KANG ,  Dai Yun LEE ,  Yong In PARK ,  Young Joo KIM

发明人： Su-Hyuk KANG ,  Dai Yun LEE ,  Yong In PARK ,  Young Joo KIM

IPC分类号： H01L29/786

CPC分类号： H01L29/42384 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/14621 ,  H01L29/78621

摘要： An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

摘要翻译： 用于LCD器件的阵列衬底包括：第一TFT，包括第一半导体层，第一栅电极，其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT，第二栅电极，其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层，第三栅电极的栅极线，其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。

公开(公告)号：US20090206830A1

公开(公告)日：2009-08-20

申请号：US12033059

申请日：2008-02-19

申请人： Young Joo KIM ,  Bong Young Ahn ,  Seung Seok Lee ,  Young Gil Kim ,  Dong Jin Yoon

发明人： Young Joo KIM ,  Bong Young Ahn ,  Seung Seok Lee ,  Young Gil Kim ,  Dong Jin Yoon

IPC分类号： G01N27/82

CPC分类号： G01N27/9033 ,  G01N27/9013

摘要： Disclosed herein is a sensor for detecting surface defects of a metal tube, which can solve a problem of a conventional eddy current probe in that it is difficult to detect a crack in the circumferential direction of a metal tube.For this purpose, the present provides a sensor for detecting surface defects of a metal tube, the sensor including a plurality of coils wound at a predetermined inclined angle, wherein the plurality of coils is inserted into the inside of a metal tube and an alternating current is applied to the coils to measure a change in impedance of the coils due to a change in an eddy current generated in the metal tube, thus detecting a surface defect of the metal tube.

摘要翻译： 这里公开了一种用于检测金属管的表面缺陷的传感器，其可以解决常规涡流探针的问题，因为难以检测金属管的圆周方向的裂纹。 为此，本发明提供了一种用于检测金属管的表面缺陷的传感器，该传感器包括以预定倾斜角度缠绕的多个线圈，其中多个线圈插入金属管的内部，并且交流 施加到线圈以测量由于金属管中产生的涡流的变化而导致的线圈阻抗的变化，从而检测金属管的表面缺陷。