公开(公告)号：US20070152706A1

公开(公告)日：2007-07-05

申请号：US11422856

申请日：2006-06-07

申请人： Young-Hun SEO ,  Jong-Hyun CHOI

发明人： Young-Hun SEO ,  Jong-Hyun CHOI

IPC分类号： H03K19/003

CPC分类号： H03K19/0016

摘要： A semiconductor integrated circuit with low power consumption is provided. In one embodiment, the semiconductor integrated circuit includes a logic circuit portion that is connected between a first power line and a virtual ground line. The logic circuit portion includes at least one NMOS transistor having a first threshold voltage and at least one PMOS transistor having a second threshold voltage. The semiconductor integrated circuit further includes a first MOS transistor, which is connected between the virtual ground line and a ground voltage, where the first MOS transistor has the first threshold voltage and applies the ground voltage to the virtual ground line in an active state. Also included in the semiconductor integrated circuit is a controller that is connected to the first MOS transistor, where the controller applies the ground voltage to the first MOS transistor in the active state and applies a bulk voltage supplied from a bulk power line in a standby state to control a threshold voltage of the first MOS transistor.

摘要翻译： 提供具有低功耗的半导体集成电路。 在一个实施例中，半导体集成电路包括连接在第一电源线和虚拟接地线之间的逻辑电路部分。 逻辑电路部分包括具有第一阈值电压的至少一个NMOS晶体管和具有第二阈值电压的至少一个PMOS晶体管。 半导体集成电路还包括连接在虚拟接地线和接地电压之间的第一MOS晶体管，其中第一MOS晶体管具有第一阈值电压，并将接地电压施加到虚拟接地线处于活动状态。 还包括在半导体集成电路中的控制器是连接到第一MOS晶体管的控制器，其中控制器将该接地电压施加到处于激活状态的第一MOS晶体管，并且将来自大容量电力线的供应的体电压施加在待机状态 以控制第一MOS晶体管的阈值电压。