摘要:
In an embodiment, a method of scanning a substrate, and a method and an apparatus for analyzing crystal characteristics are disclosed. A sequential scan on the scan areas using a first electron beam and a second electron beam are repeatedly performed. The electrons accumulated in the scan areas by the first electron beam are removed from the scan areas by the second electron beam. When a size of the scan area is substantially the same as a spot size of the first electron beam, adjacent scan areas partially overlap each other. When each of the scan areas is larger than a spot size of the first electron beam, the adjacent scan areas do not overlap each other. Images of the scan areas are generated using back-scattered electrons emitted from each of the scan areas by irradiating the first electron beam to analyze crystal characteristics of circuit patterns on the substrate.
摘要:
In a method, with improved utilization of memory, of inspecting a defect on an object, the object is divided into a plurality of inspection regions. A plurality of levels is determined according to the numbers of defects, which are expected before detecting the defects, on the inspection regions. The defects on a selected inspection region are detected. The level including a range, which corresponds to the number of defects detected on the selected inspection region, is assigned to the selected inspection region with reference to the number of defects detected on the selected inspection region. The steps of detecting defects and assigning levels are repeated with respect to remaining inspection regions.