公开(公告)号：US08030170B2

公开(公告)日：2011-10-04

申请号：US12633694

申请日：2009-12-08

申请人： Yunjun Ho ,  Matt Meyers ,  Kevin L. Beaman ,  Gregory J. Light

发明人： Yunjun Ho ,  Matt Meyers ,  Kevin L. Beaman ,  Gregory J. Light

IPC分类号： H01L21/76

CPC分类号： H01L21/76224 ,  H01L21/28273 ,  H01L27/11521

摘要： Some embodiments include methods of forming isolation structures. A trench may be formed to extend into a semiconductor material. Polysilazane may be formed within the trench, and then exposed to steam. A maximum temperature of the polysilazane during the steam exposure may be less than or equal to about 500° C. The steam exposure may convert all of the polysilazane to silicon oxide. The silicon oxide may be annealed under an inert atmosphere. A maximum temperature of the silicon oxide during the annealing may be from about 700° C. to about 1000° C. In some embodiments, the isolation structures are utilized to isolate nonvolatile memory components from one another.

摘要翻译： 一些实施方案包括形成隔离结构的方法。 可以形成沟槽以延伸到半导体材料中。 可以在沟槽内形成聚硅氮烷，然后暴露于蒸汽中。 蒸汽暴露期间聚硅氮烷的最高温度可以小于或等于约500℃。蒸汽暴露可将所有聚硅氮烷转化为氧化硅。 氧化硅可以在惰性气氛下进行退火。 退火期间氧化硅的最高温度可以是约700℃至约1000℃。在一些实施例中，隔离结构用于将非易失性存储器组件彼此隔离。

公开(公告)号：US20110136319A1

公开(公告)日：2011-06-09

申请号：US12633694

申请日：2009-12-08

申请人： Yunjun Ho ,  Matt Meyers ,  Kevin L. Beaman ,  Gregory J. Light

发明人： Yunjun Ho ,  Matt Meyers ,  Kevin L. Beaman ,  Gregory J. Light

IPC分类号： H01L21/762

CPC分类号： H01L21/76224 ,  H01L21/28273 ,  H01L27/11521

摘要： Some embodiments include methods of forming isolation structures. A trench may be formed to extend into a semiconductor material. Polysilazane may be formed within the trench, and then exposed to steam. A maximum temperature of the polysilazane during the steam exposure may be less than or equal to about 500° C. The steam exposure may convert all of the polysilazane to silicon oxide. The silicon oxide may be annealed under an inert atmosphere. A maximum temperature of the silicon oxide during the annealing may be from about 700° C. to about 1000° C. In some embodiments, the isolation structures are utilized to isolate nonvolatile memory components from one another.

摘要翻译： 一些实施方案包括形成隔离结构的方法。 可以形成沟槽以延伸到半导体材料中。 可以在沟槽内形成聚硅氮烷，然后暴露于蒸汽中。 蒸汽暴露期间聚硅氮烷的最高温度可以小于或等于约500℃。蒸汽暴露可将所有聚硅氮烷转化为氧化硅。 氧化硅可以在惰性气氛下进行退火。 退火期间氧化硅的最高温度可以是约700℃至约1000℃。在一些实施例中，隔离结构用于将非易失性存储器组件彼此隔离。