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公开(公告)号:US06998331B2
公开(公告)日:2006-02-14
申请号:US10394403
申请日:2003-03-21
申请人: Yuval C. Avniel , Peter Mardilovich , Alexander Govyadinov
发明人: Yuval C. Avniel , Peter Mardilovich , Alexander Govyadinov
IPC分类号: H01L21/20
CPC分类号: H01L29/06 , C23C14/0641 , C23C14/165 , C23C14/352 , C23C14/543
摘要: A three dimensional structure comprising at least two materials capable of being deposited by vapor deposition. The structure is fabricated by the controlled vapor deposition of the materials onto a substrate.
摘要翻译: 包括能够通过气相沉积沉积的至少两种材料的三维结构。 该结构通过材料的受控气相沉积制成衬底。