公开(公告)号：US09407828B2

公开(公告)日：2016-08-02

申请号：US13877196

申请日：2013-04-01

申请人： ZEEANN CO., LTD.

发明人： Jawoong Lee ,  Junhee Cho ,  Byounghwan Choi, I

IPC分类号： H04N5/335 ,  H01L29/66 ,  H04N5/235 ,  H04N5/355 ,  H04N5/353 ,  H04N5/3745

CPC分类号： H04N5/2352 ,  H04N5/2351 ,  H04N5/2353 ,  H04N5/2354 ,  H04N5/3535 ,  H04N5/35536 ,  H04N5/3559 ,  H04N5/37452 ,  H04N2209/048

摘要： Disclosed is a CMOS image sensor comprising a unit pixel which includes a photodetector (e.g., photodiode); an erasing transistor which, being connected to the photodetector, controls the exposure integration time of the photodetector by time division; a charge storage (e.g., floating diffusion region) in which the charge accumulated in the photodetector is transferred and stored; and a transfer transistor which, being connected between the photodetector and the charge storage, transfers the charge accumulated in the photodetector to the charge storage; wherein a first signal charge accumulated in the photodetector during the first exposure integration time is transferred to the charge storage and stored therein, and the second signal charge is accumulated in the photodetector during the second exposure integration time, thereby sequentially reading out signals in response to the first signal charge and the second signal charge at a time of sampling out the information on signal charge stored in the unit pixel.

摘要翻译： 公开了一种CMOS图像传感器，其包括包括光电检测器（例如光电二极管）的单位像素; 与光电检测器连接的擦除晶体管通过时分控制光电检测器的曝光积分时间; 电荷存储（例如，浮动扩散区域），其中积累在光电检测器中的电荷被转移和存储; 连接在光电检测器和电荷存储器之间的转移晶体管将积累在光电检测器中的电荷传送到电荷存储器; 其中在所述第一曝光积分时间期间累积在所述光电检测器中的第一信号电荷被传送到所述电荷存储器并存储在其中，并且所述第二信号电荷在所述第二曝光积分时间期间累积在所述光电检测器中，由此响应于 在对存储在单位像素中的信号电荷的信息进行取样时，第一信号电荷和第二信号电荷。