公开(公告)号：US11843417B2

公开(公告)日：2023-12-12

申请号：US18197751

申请日：2023-05-16

Applicant: ZHEJIANG LAB

Inventor： Qiang Zhang ,  Hui Yu

IPC: H04B10/60 ,  G02F1/295 ,  G02F1/31 ,  G02F1/313

CPC classification number: H04B10/60 ,  G02F1/2955 ,  G02F1/311 ,  G02F1/3131 ,  G02F2201/06 ,  G02F2201/205 ,  G02F2201/307 ,  G02F2202/10 ,  G02F2203/58 ,  G02F2203/70

Abstract: A programmable two-dimensional simultaneous multi-beam optically operated phased array receiver chip is manufactured based on silicon-on-insulator (SOI) and indium phosphide (InP) semiconductor manufacturing processes, including the SiN process. The InP-based semiconductor is used for preparing a laser array chip and a semiconductor optical amplifier array chip, the SiN is used for preparing an optical power divider, and the SOI semiconductor is used for preparing a silicon optical modulator, a germanium-silicon detector, an optical wavelength multiplexer, a true delay line, and other passive optical devices. The whole integration of the receiver chip is realized through heterogeneous integration of the InP-based chip and the SOI-based chip. Simultaneous multi-beam scanning can be realized through peripheral circuit programming control. The chip not only can realize two-dimensional multi-beam scanning, but also has strong expansibility, such that the chip can be used for ultra-wideband high-capacity wireless communication and simultaneous multi-target radar recognition systems.