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公开(公告)号:US20230167029A1
公开(公告)日:2023-06-01
申请号:US18153117
申请日:2023-01-11
发明人: Wei HAO , Xinyue CHEN , Chunni ZHOU , Xiaoxian QIN , Dongyun WANG
IPC分类号: C04B35/58 , C04B35/626 , C04B35/65
CPC分类号: C04B35/58078 , C04B35/58071 , C04B35/62615 , C04B35/6264 , C04B35/65 , C04B2235/424 , C04B2235/3244 , C04B2235/3251 , C04B2235/3232 , C04B2235/3813 , C04B2235/3826 , C04B2235/5454 , C04B2235/5445 , C04B2235/5436 , C04B2235/604 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6581 , C04B2235/96 , C04B2235/77
摘要: diboride-silicon carbide (SiC) multiphase ceramic, including: (S1) mixing a transition metal oxide mixed powder, nano carbon black and a silicon hexaboride (SiB6) powder to obtain a precursor powder; and (S2) subjecting the precursor powder to pressureless sintering to obtain the high-entropy carbide-high-entropy diboride-SiC multiphase ceramic with a relative density of 96% or more.