公开(公告)号：US07588036B2

公开(公告)日：2009-09-15

申请号：US10187817

申请日：2002-07-01

申请人： Zhenjiang Cui ,  Michael S. Cox ,  Canfeng Lai ,  Paddy Krishnaraj

发明人： Zhenjiang Cui ,  Michael S. Cox ,  Canfeng Lai ,  Paddy Krishnaraj

IPC分类号： B08B7/00 ,  B08B7/04

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J2237/022 ,  Y10S438/905

摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber. According to one embodiment the process comprises performing a substrate processing operation on the substrate within the substrate processing chamber and then transferring the substrate out of the substrate processing chamber; flowing a first etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to remove a first portion of the unwanted deposition build-up; and thereafter, flowing a second etchant gas into the substrate processing chamber and forming a plasma within the substrate processing chamber from the second gas in order to remove a second portion of the unwanted deposition build-up.

摘要翻译： 一种用于从衬底处理室的一个或多个内表面去除不想要的沉积物的方法。 根据一个实施例，该方法包括在衬底处理室内的衬底上执行衬底处理操作，然后将衬底转移出衬底处理室; 将第一蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应性物质并将反应物质输送到基底处理室中以去除不需要的沉积物堆积的第一部分; 然后将第二蚀刻剂气体流入基板处理室，并从第二气体在基板处理室内形成等离子体，以便去除不需要的沉积物积聚的第二部分。