公开(公告)号：US07838345B2

公开(公告)日：2010-11-23

申请号：US11416436

申请日：2006-05-02

申请人： Zhonghai Shi ,  Bich-Yen Nguyen ,  Héctor Sánchez

发明人： Zhonghai Shi ,  Bich-Yen Nguyen ,  Héctor Sánchez

IPC分类号： H01L21/00

CPC分类号： H01L29/785 ,  H01L29/66795

摘要： An electronic device can include a first semiconductor fin and a second semiconductor fin, each spaced-apart from the other. The electronic device can also include a bridge lying between and contacting each of the first semiconductor fin and the second semiconductor fin along only a portion of length of each of the first semiconductor fin and the second semiconductor fin, respectively. In another aspect, a process for forming an electronic device can include forming a first semiconductor fin and a second semiconductor fin from a semiconductor layer, each of the first semiconductor fin and the second semiconductor fin spaced-apart from the other. The process can also include forming a bridge that contacts the first semiconductor fin and second semiconductor fin. The process can further include forming a conductive member, including a gate electrode, lying between the first semiconductor fin and second semiconductor fin.

摘要翻译： 电子设备可以包括与另一个间隔开的第一半导体鳍片和第二半导体鳍片。 电子设备还可以分别包括位于第一半导体鳍片和第二半导体鳍片之间并且分别仅与第一半导体鳍片和第二半导体鳍片的每一个的长度的一部分接触的桥接器。 在另一方面，一种用于形成电子器件的方法可以包括从半导体层形成第一半导体鳍片和第二半导体鳍片，每个第一半导体鳍片和第二半导体鳍片彼此间隔开。 该工艺还可以包括形成接触第一半导体鳍片和第二半导体鳍片的桥。 该方法还可以包括形成位于第一半导体鳍片和第二半导体鳍片之间的包括栅电极的导电构件。