Indium oxide based material and method for preparing the same
    1.
    发明授权
    Indium oxide based material and method for preparing the same 有权
    氧化铟基材料及其制备方法

    公开(公告)号:US07462302B2

    公开(公告)日:2008-12-09

    申请号:US11336142

    申请日:2006-01-20

    CPC classification number: H01B1/08

    Abstract: An indium oxide based material containing carbon, and a method for preparing the same are provided. In such a method, the carbon is added to the indium oxide based material film so that the electrical resistivity of the indium oxide based material film is decreased, and the light transmittance of the indium oxide based material in the shorter wavelength range is increased, and also the light can transmit through such a material over a broader short wavelength range. The indium oxide based material prepared by the method of the present invention has higher electrical conductivity and higher light transmittance in comparison with the conventional one without adding carbon.

    Abstract translation: 提供含有碳的氧化铟基材料及其制备方法。 在这种方法中,将碳添加到氧化铟基材料膜中,使得氧化铟基材料膜的电阻率降低,并且氧化铟基材料在较短波长范围内的透光率增加,并且 光也可以在较宽的短波长范围内透过这种材料。 通过本发明的方法制备的氧化铟基材料与不添加碳的现有技术相比,具有更高的导电性和更高的透光率。

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