公开(公告)号：US4686556A

公开(公告)日：1987-08-11

申请号：US797587

申请日：1985-11-13

申请人： Klaus Dietrich

发明人： Klaus Dietrich

IPC分类号： H01J1/34 ,  H01L27/14

CPC分类号： H01J1/34 ,  H01J2201/3423

摘要： The invention relates to a photocathode for the infra-red range having a plurality of layers of semi-conductive and conductive material. The photocathode is transparent and sensitive in a spectral range of between approx. 1 and 20 .mu.m. This is achieved by the following layer structure:p.sub.1 : a highly doped p-layern.sub.2 : a highly doped n-layeri.sub.3 : an intrinsic layerp.sub.4 : a highly doped p-layerm.sub.5 : a thin metal layer, preferably of an atomic layer of Cs.The spectral sensitivity can be adjusted by applying a negative bias voltage to the layer p.sub.1 with respect to the layer P.sub.4. When this happens, the Fermi level of the layer p.sub.2 is shifted and the work function of the electrons is reduced.

摘要翻译： 本发明涉及一种用于红外线范围的光电阴极，具有多层半导体和导电材料。 光电阴极在光谱范围内是透明和敏感的。 1和20亩。 这通过以下层结构实现：p1：高掺杂p层n2：高掺杂n层i3：本征层p4：高掺杂p层m5：薄金属层，优选原子层 的Cs。 可以通过相对于层P4向层p1施加负偏置电压来调整光谱灵敏度。 当这种情况发生时，层p2的费米能级被移动，电子的功函数减小。