公开(公告)号：US20240282542A1

公开(公告)日：2024-08-22

申请号：US18570222

申请日：2022-06-15

Applicant: The Board of Trustees of the Leland Stanford Junior University

Inventor： Evan R. Antoniuk ,  Bruce Dunham ,  Piero Pianetta ,  Theodore Vecchione ,  Evan J. Reed

IPC: H01J1/34 ,  G06F30/373 ,  G06F111/10 ,  G06F119/08 ,  G06F119/18 ,  H01J9/12

CPC classification number: H01J1/34 ,  G06F30/373 ,  H01J9/12 ,  G06F2111/10 ,  G06F2119/08 ,  G06F2119/18 ,  H01J2201/3423

Abstract: Among various examples, one is directed to identifying one or more particular photocathode semiconductor structures via a computer-based method. The method includes calculating, for each of a plurality of semiconductor materials and via a database characterizing electronic band structures of respective semiconductor materials corresponding to the plurality of semiconductor materials, an intrinsic emittance score (e.g., using an optimistic selection of a work function) as a predictive screening metric for whether the semiconductor material may exhibit low intrinsic emittance. A subset of the semiconductor materials may be selected, wherein each of the semiconductor materials in the subset satisfies screening criteria based on the intrinsic emittance score, and photocathode brightness properties of said one or more of the semiconductor materials in the subset are characterized, thereby identifying certain semiconductor materials in the subset of the semiconductor materials with desirable photocathode brightness properties.

公开(公告)号：US20190189408A1

公开(公告)日：2019-06-20

申请号：US16318858

申请日：2017-06-14

Applicant: Aktsionernoe Obshchestvo "KATOD"

Inventor： Iosif Isaakovich GOL'DBERG ,  Aleksandr Vladimirovich DOLGIKH ,  Vladimir Il'ich LOKTIONOV

IPC: H01J40/06 ,  H01J43/08 ,  H01J31/50

CPC classification number: H01J40/06 ,  H01J31/50 ,  H01J43/08 ,  H01J2201/3423

Abstract: A photocathode assembly of a vacuum photoelectronic device with a semi-transparent photocathode that consists of an input window in the form of a disk made from sapphire, layers of heteroepitaxial structure of gallium nitride compounds as a semi-transparent photocathode grown on the inner surface of the input window, and an element for connecting the input window with a vacuum photoelectronic device housing, which is vacuum-tight fixed on the outer surface of the input window at its periphery. The element for connecting of the input window with the vacuum photoelectronic device housing is made of a bimetal, in which a layer that is not in contact with the outer surface of the input window consists of a material with a temperature coefficient of linear expansion that differs from the temperature coefficient of linear expansion of sapphire by no more than 10% in the temperature range from 20° C. to 200° C.

公开(公告)号：US09478385B2

公开(公告)日：2016-10-25

申请号：US14339004

申请日：2014-07-23

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jae-woo Kim ,  Yoon-Ho Song ,  Jin Woo Jeong ,  Jun Tae Kang ,  Sungyoul Choi ,  Jeong Yong Choi

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/34 ,  H01J35/06 ,  B82Y30/00

CPC classification number: H01J1/304 ,  B82Y30/00 ,  H01J1/34 ,  H01J35/065 ,  H01J2201/30469 ,  H01J2201/3423 ,  Y10S977/742 ,  Y10S977/939

Abstract: Provided are a field emission device and a method of manufacturing the same. The field emission device includes an anode electrode and a cathode electrode which are opposite to each other, a counter layer provided on the anode electrode, and a field emitter provided on the cathode electrode and facing the counter layer. Herein, the field emitter includes a carbon nanotube emitting cold electrons and a photoelectric material emitting photo electrons.

Abstract translation: 提供场致发射器件及其制造方法。 场致发射器件包括彼此相对的阳极电极和阴极电极，设置在阳极电极上的对置层，以及设置在阴极电极上且面向对置层的场致发射体。 这里，场致发射体包括发射冷电子的碳纳米管和发射光电子的光电材料。

公开(公告)号：US20160203937A1

公开(公告)日：2016-07-14

申请号：US14594949

申请日：2015-01-12

Applicant: UChicago Argonne, LLC

Inventor： Anirudha V. Sumant ,  Sergey V. Baryshev ,  Sergey P. Antipov

IPC: H01J1/304 ,  H01J9/12 ,  H01J1/34 ,  H01J9/02

CPC classification number: H01J1/34 ,  H01J1/3048 ,  H01J9/025 ,  H01J9/12 ,  H01J2201/30457 ,  H01J2201/3423

Abstract: A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 1012 to about 1014 emitting sites per cm2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

Abstract translation: 形成场致发射体的方法包括在衬底上设置第一层。 第一层用纳米金刚石颗粒接种。 其上设置有第一层的衬底在包括氮气的气体混合物中保持在第一温度和第一压力。 将第一层暴露于微波等离子体以在第一层上形成氮掺杂的超微晶金刚石膜，其具有在约0.05原子％至约0.5原子％范围内的氮的百分比。 场发射体每平方厘米具有约1012至约1014个发射点。 也可以类似地通过在类似于场发射体的衬底上形成氮掺杂的超微晶金刚石膜，然后氢终止膜而形成光电阴极。 光电阴极对近紫外光以及可见光有反应。

公开(公告)号：US08729798B2

公开(公告)日：2014-05-20

申请号：US13284861

申请日：2011-10-28

Applicant: Jihun Oh ,  Howard M. Branz

Inventor： Jihun Oh ,  Howard M. Branz

IPC: H01J40/06 ,  C03C15/00

CPC classification number: H01J40/06 ,  B82Y20/00 ,  C25B1/003 ,  C25B11/04 ,  H01J2201/3423 ,  Y02E60/368 ,  Y02P20/134 ,  Y02P20/135

Abstract: Exemplary embodiments are disclosed of anti-reflective nanoporous silicon for efficient hydrogen production by photoelectrolysis of water. A nanoporous black Si is disclosed as an efficient photocathode for H2 production from water splitting half-reaction.

Abstract translation: 公开了抗反射纳米多孔硅的示例性实施例，用于通过光电解水来有效地生产氢。 公开了一种纳米多孔黑色Si作为从分水半反应生产H 2的有效光电阴极。

公开(公告)号：US08344354B2

公开(公告)日：2013-01-01

申请号：US12736270

申请日：2009-03-24

Applicant: Toru Ujihara ,  Xiuguang Jin ,  Yoshikazu Takeda ,  Tsutomu Nakanishi ,  Naoto Yamamoto ,  Takashi Saka ,  Toshihiro Kato

Inventor： Toru Ujihara ,  Xiuguang Jin ,  Yoshikazu Takeda ,  Tsutomu Nakanishi ,  Naoto Yamamoto ,  Takashi Saka ,  Toshihiro Kato

IPC: H01L31/0304

CPC classification number: G21K1/16 ,  H01J1/34 ,  H01J3/021 ,  H01J37/06 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557 ,  H01J2237/26

Abstract: A spin-polarized electron generating device includes a substrate, a buffer layer, a strained superlattice layer formed on the buffer layer, and an intermediate layer formed of a crystal having a lattice constant greater than a lattice constant of a crystal of the buffer layer, the intermediate layer intervening between the substrate and the buffer layer. The buffer layer includes cracks formed in a direction perpendicular to the substrate by tensile strain.

Abstract translation: 自旋极化电子产生装置包括衬底，缓冲层，形成在缓冲层上的应变超晶格层，以及由晶格常数大于缓冲层晶体的晶格常数的晶体形成的中间层， 介于衬底和缓冲层之间的中间层。 缓冲层包括通过拉伸应变在垂直于基板的方向上形成的裂纹。

公开(公告)号：US06690019B2

公开(公告)日：2004-02-10

申请号：US10090017

申请日：2002-02-22

Applicant: Roger Stettner ,  Howard W. Bailey

Inventor： Roger Stettner ,  Howard W. Bailey

IPC: G01T124

CPC classification number: G01T1/1644 ,  G01T1/2018 ,  G01T1/247 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50031 ,  H01J2231/50063 ,  H01J2231/50068 ,  H01J2231/5056 ,  H01L27/146 ,  H01L27/14625 ,  H01L27/148 ,  H01L2224/48137

Abstract: A device for the high-speed analysis of photon- or particle-generated image data or for the high-speed energy-discrimination analysis of photon- or particle-counting data. A sensor collects the photons or particles on an array of solid state detectors, as electrical analog signals, and stores the analog-signal information on capacitors of readout arrays associated with the detector arrays. Image-related signals are transferred to integrated circuit chips containing an array of correction processor unit cells. Corrected signals are transferred to an analog image processor. Particle-counting data is transferred directly from the readout array chips to the analog image processor having circuitry for implementing an image processing or energy discrimination algorithm.

Abstract translation: 用于高速分析光子或粒子产生的图像数据或用于光子或粒子计数数据的高速能量鉴别分析的装置。 传感器将固态检测器阵列上的光子或微粒收集为电气模拟信号，并将模拟信号信息存储在与检测器阵列相关联的读出阵列的电容上。 图像相关信号被传送到包含校正处理器单元单元阵列的集成电路芯片。 校正的信号被传送到模拟图像处理器。 粒子计数数据直接从读出阵列芯片传送到具有用于实现图像处理或能量鉴别算法的电路的模拟图像处理器。

公开(公告)号：US20010001226A1

公开(公告)日：2001-05-17

申请号：US09741826

申请日：2000-12-22

Applicant: Hamamatsu Photonics K.K.

Inventor： Tokuaki Nihashi

IPC: H01J040/16

CPC classification number: H01J1/34 ,  H01J43/08 ,  H01J2201/3423 ,  H01J2231/50021

Abstract: A photocathode having a UV glass substrate and a laminate composed of a SiO2 layer, a GaAlN layer, a Group III-V nitride semiconductor layer and an AlN buffer layer provided on the UV glass substrate in succession. The UV glass substrate, which absorbs infrared rays, can be heat treated at a high speed by photoheating. Further, the UV glass substrate, which is transparent to ultraviolet rays, permits ultraviolet rays to be introduced into the Group III-V nitride semiconductor layer where photoelectric conversion occurs.

Abstract translation: 具有UV玻璃基板和由UV玻璃基板上设置的SiO 2层，GaAlN层，III-V族氮化物半导体层和AlN缓冲层构成的层叠体的光电阴极。 吸收红外线的紫外线玻璃基板可以通过光热进行高速热处理。 此外，对紫外线透明的紫外线玻璃基板，能够在发生光电转换的III-V族氮化物半导体层中引入紫外线。

公开(公告)号：US6121612A

公开(公告)日：2000-09-19

申请号：US955694

申请日：1997-10-22

Applicant: Timothy W. Sinor ,  Joseph P. Estrera ,  David G. Couch

Inventor： Timothy W. Sinor ,  Joseph P. Estrera ,  David G. Couch

IPC: H01J1/34 ,  G01T1/28 ,  H01J40/06

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A night vision device includes an image intensifier tube having a photocathode responsive to light in the wavelength range extending from about 1 .mu.m to about 2 .mu.m. The photocathode releases photoelectrons in response to photons of light in this wavelength range. A photomultiplier tube includes such a photocathode to provide an image in response to light of such a wavelength. A method of making such a photocathode is set out.

Abstract translation: 夜视装置包括具有响应于从约1μm至约2μm的波长范围内的光的光电阴极的图像增强管。 光电阴极响应于该波长范围内的光子发射光电子。 光电倍增管包括这样的光电阴极，以响应于这种波长的光提供图像。 提出了制造这种光电阴极的方法。

公开(公告)号：US6116976A

公开(公告)日：2000-09-12

申请号：US359995

申请日：1999-07-22

Applicant: Timothy W. Sinor ,  Joseph P. Estrera ,  Keith T. Passmore

Inventor： Timothy W. Sinor ,  Joseph P. Estrera ,  Keith T. Passmore

IPC: H01J1/34 ,  H01J9/12 ,  H01J29/38 ,  H01J40/06

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J29/38 ,  H01J2201/3421 ,  H01J2201/3423

Abstract: A novel photocathode and image intensifier tube include an active layer comprised substantially of amorphic diamond-like carbon, diamond, or a combination of both. The photocathode has a face plate coupled to an active layer. The active layer is operable to emit electrons in response to photons striking the face plate.

Abstract translation: 新型光电阴极和图像增强管包括基本上由非晶金刚石样碳，金刚石或两者的组合组成的活性层。 光电阴极具有耦合到有源层的面板。 有源层可操作以响应于撞击面板的光子而发射电子。